In this technology platform, we develop techniques to characterize the mechanical and chemical properties at nano-scale in 3D.
Nondestructive subsurface nano-imaging is of tremendous importance due to the growing complexity of manufacturing semiconductor components such as logic and memory cells. For example, today's 3D transistors such as FinFET, gate-all-around silicon nanowire FET, 3D NAND memory and future quantum electronics have nanostructures which are deeply buried beneath other nanostructured layers. The ability to manufacture, measure and align these structures on top of each other directly impacts chip's performance and yield. In this technology platform we develop concepts and solutions to be able to characterize mechanical properties at the nano-scale and to enable nano-scale imaging of features or defects through several (opaque) layers. Examples are the development of quantitative Subsurface Probe Microscopy (SSPM), to detect and image nanostructures buried under various layers, and Photo-Thermo-Acoustic Imaging, a fully optical method to measure 3D structures below the surface with depth sensitivity.